Configuration terminal for integrated devices and method for configuring an integrated device

ABSTRACT

A configuration terminal for integrated devices includes a first and a second portion structurally independent and connected to respective first and second terminals and it has at least one contact terminal suitable to be selectively connected to such first and second terminals. Also a method configures an integrated device that includes a plurality of address pads and respective supply pins. The method includes: realizing at least one configuration terminal having a first and a second portion structurally independent and connected to at least one contact terminal; providing the contact of such first and second portions with respective terminals; and configuring the device by a short-circuiting of the contact terminal with at least one of said terminals.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a configuration terminal for integrateddevices. The invention also relates to a method for configuring anintegrated device.

2. Description of the Related Art

As it is well known in the field of semiconductor integrated devices,there is often the need of configuring, in an optional way, devicessharing a fundamental structure.

In particular, such configuration flexibility of the integrated devicesoccurs each time a single configuration or layout is to be used, andwhen, in the meantime, what follows is to be considered:

as many functionalities as possible for the devices thus configured;

providing higher capacity for a base device, such as a memory device;

arranging multiple assemblies of integrated devices and in particular ofchips on more levels (to obtain the so-called stacked structures);

allowing a single device a greater configuration flexibility (forexample to allow an exchange of its contact terminals or pads).

For example, using such a configuration is known in a case having amemory cut off greater than the one technologically possible.

In such case, a plurality of elementary memory devices integrated withthe technology available (and thus of smaller dimensions than whatdesired) is assembled in a stacked structure for realizing a memory ofgreater dimensions and possible expansions thereof. Such elementarymemory devices are thus provided with address pads and additional“configuration” pads. In particular, such additional configuration padsare used for “sensitizing”, in combination with the additional addresspads, the activation of a single elementary memory device among the onesin the stacked structure.

It is also known that when the expansion is greater than 2 (4, 8 . . . )more additional configuration pads are to be provided.

The presence of configuration pads conditions the memory device layoutsince such configuration pads should be placed between the terminals orpins of the voltage references used, in particular the supply voltagereference Vdd and ground Gnd. More specifically, the configuration padsare to be placed in a central position with respect to such supply pins.In this way, for each additional configuration pad also an additionalsupply pin is to be added, connected to ground Gnd or to the supplyvoltage reference Vdd, for allowing the correct positioning of theadditional configuration pads.

An example of layout of an integrated device provided with additionaladdress and configuration pads is schematically shown in FIG. 1,globally indicated with 10.

The device 10 has a first P1 and a second supply pin P2, as well as anadditional supply pin P3. In particular, in the example shown in thefigure, the first supply pin P1 is connected to the supply voltage Vdd,the second supply pin P2 is connected to the ground Gnd and theadditional supply pin P3 is connected to the supply voltage Vdd.

The device 10 also has n address pads A0 . . . An dedicated to thenormal operation of the device itself, as well as a first An+1 and asecond An+2 additional address pads connected to corresponding firstBn+1 and second Bn+2 additional configuration pads introduced forrealizing an expansion of the device 10. Although in the example of FIG.1 only two additional configuration and address pads are indicated, itis clear that it is possible to consider any number of such additionalpads, according to the configuration needs of the device at issue.

In particular, the first additional configuration pad Bn+1 is used forsensitizing the first additional address pad An+1 on a high level, orequivalently low, to a configuration signal received. It is alsopossible to associate a different configuration of the device with saidhigh and low values of the configuration signal on the additionalconfiguration pad Bn+1. As shown in the figure, it is possible to placesuch first additional configuration pad Bn+1 between the supply andground pins, P1 and P2 respectively, normally present in any integrateddevice, respecting the central positioning constraints for saidconfiguration pads.

The presence of a second additional configuration pad Bn+2 howevercauses the addition of the additional supply pin P3 for enabling acorrect positioning of such additional configuration pad Bn+2 betweenthe second supply pin P2 and such additional supply pin P3, as shown inFIG. 1.

It is thus obvious that when the number of additional address pads ofthe integrated device increases a corresponding increase of the numberof additional configuration pads is to be provided, which in turn causesthe introduction of a congruous number of additional supply pins.

It is immediate to verify that, in the case of a great number ofconfiguration pads, the hypothesis of feasibility becomes problematicand, in addition, its implementation is expensive and penalizing.

In the case of implementations of more functionalities of an integrateddevice, resorting to Option_Mask solutions is alternatively known forthe configuration step of the device itself, which, however, imply afurther expense increase due to the cost of the masks and to theirmanagement, as well as the introduction of a corresponding additionalprocess step.

In the case of expansions of an integrated device by means of structuresof the Stacked type, the traditional approach of connection by means ofleads or metallic wires (the so called “Bonding”) is also complex, oftentied to conditions of feasibility and in any case affected bycomplications of the bonding operation.

FIG. 2 shows, by way of example, a possible connection by means ofbonding of a stacked structure 20. It is clear how the connection ofsingle pads Tn of different levels L1 . . . Ln of the stacked device 20by using a plurality of connection wires Wn to the common supply pins Pnrequires an accurate planning of the positioning of such pads Tn and ofthe connection wires Wn to avoid that accidental contacts between suchwires jeopardize the correct operation of the stacked structure 20 onceassembled, although the case considered is the most favorable case interms of position and number of pads at stake.

The above limitations and complications strongly affect, in the devicesrealized according to the prior art, both the “extendedmulti_configurability” and the essential one. It is important to remarkthat the available configurabilities are not only of the “expansion” or“multi-stacked” type as in the case of memory device but also of the“functional” type. The complexity associated with their implementationsin practice limits and/or does not recommend the use thereof.

BRIEF SUMMARY OF THE INVENTION

One embodiment of the present invention provides an integrated devicewith configuration terminals, having such structural and functionalcharacteristics as to allow to overcome the limits and the drawbacksstill affecting the methods realized according to the prior art.

One embodiment of the present invention provides the integrated devicewith pads able to realize a connection to a supply and a ground voltagereference in an optional way. In particular, such pads are sensitive toshort circuit and allow to carry out the configuration of such device atthe end of the realization process, not introducing any layoutconstraint and minimizing the area occupation, favoring in this way theassemblies of the stacked type and the functional options.

The characteristics and advantages of the configuration terminal and ofthe configuration method according to the invention will be apparentfrom the following description of an embodiment thereof given by way ofindicative and non limiting example with reference to the annexeddrawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In such drawings:

FIG. 1 schematically shows an integrated device comprising address andconfiguration pads and realized according to the prior art;

FIG. 2 schematically shows a stacked structure of integrated devicesrealized according to the prior art;

FIGS. 3A and 3B schematically show respective top and cross sectionviews of a configuration terminal of an integrated device realizedaccording to one embodiment of the invention;

FIG. 3C schematically shows a further embodiment of the configurationterminal of FIG. 3B;

FIG. 4 schematically shows a stacked structure of integrated devicesrealized according to one embodiment of the invention;

FIGS. 5A-5E, and from 6 to 8 schematically show possible applications ofthe configuration terminal according to one embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

With reference to such figures, and in particular to FIGS. 3A and 3B, aconfiguration terminal for integrated devices realized according to thepresent invention is globally and schematically indicated at 30.

Advantageously according to the invention, the configuration terminal 30has a symmetrical structure and is made of a first portion 30 a,suitably connected by a first terminal Ta to a first voltage reference,in particular a supply voltage Vdd, as well as of a second portion 30 bsuitably connected by a second terminal Tb to a second voltagereference, in particular a ground Gnd.

As highlighted in the cross section of FIG. 3B, the first portion 30 aof the configuration terminal 30 has a first metallization level,indicated as metal1, connected to the supply voltage Vdd, as well as, bymeans of a plurality of vias Vm, to a second metallization level, inparticular a final metallization level, indicated as metal2.

Advantageously, the second and last metallization level metal2 issuitably interdigitized so as to alternate connected portions 31, whichare connected through the vias Vm to the first metallization levelmetal1, with free portions 32 that are left floating. Theinterdigitizing is realized by employing minimal distances between thepads of the portions 31, 32 at issue so as to favor the futureconnection in order to be able to choose the terminal connection to thevoltage references (Vdd or Gnd) at the end of the manufacturing process,as it will be clarified hereafter in the description.

In other words, the first and the second portion, 30 a and 30 b, of theconfiguration terminal 30 are divided in corresponding central parts 33a, 33 b and peripheral parts 34 a, 34 b. In particular, the centralparts 33 a, 33 b comprise vertical elements 35 a, 35 b connected to thecorresponding terminal, Ta and Tb, and the central parts are completelycontained inside the peripheral parts. Advantageously, the peripheralparts 34 a, 34 b of the portions 30 a and 30 b are, actually, portionsof a contact terminal IN of the configuration terminal 30, suchperipheral parts thus being short-circuited with one another.

The contact terminal IN also comprises a central part 36 shared by theperipheral parts 34 a, 34 b of the two portions 30 a and 30 b.

It is to be remarked that the central parts 33A, 33B of the portions 30a and 30 b of the configuration terminal 30 include portions 32 of thefirst metallization layer metal1 which are not connected to one anotherand, especially, they are not connected to the contact terminal IN.

In this way, such free portions 32 of the central parts 33A 33B of theportions 30 a and 30 b are structurally independent and physicallyseparated and they can be connected separately to different voltagereferences, or more in general, to different signals.

In FIG. 3B, the contact to the contact terminal IN by the portions 30 aand 30 b is made by the free portions 32 and has been indicated by meansof arrows with the wording “floating”, such floating conditioncorresponding to an initial condition of the configuration terminal 30prior to its configuration.

In a preferred embodiment of the invention, such vias Vm are realized bymeans of metallic plugs, in particular realized with tungsten.

The second portion 30 b of the configuration terminal 30 has a structurebeing similar to the first portion 30 a, with connection of the firstmetallization level metal1 to ground Gnd.

In substance, the configuration terminal 30 has two portions 30 a and 30b structurally independent and connected to respective voltagereferences Vdd and Gnd.

In this way, the configuration terminal 30 realizes a terminal foroptional connection to the supply Vdd and ground Gnd voltage references,such connection being realized by simply connecting the contact terminalIN to the central parts of the portions 30 a and 30 b respectively, thusrealizing a local connection to the supply references.

Moreover, given the reduced dimensions of the central parts 33 a, 33 bof the portions 30 a, 30 b of the configuration terminal 30, theconnection to the contact terminal IN can be realized by means of a“ball” suitable to short-circuit the same realizing local connectionareas 38, without having to resort to a real bonding by means of leadsor connection wires.

Advantageously, the interdigitizing of the final metallization level, inthe example of FIG. 3B the second metallization level metal2, issuitably chosen so as to facilitate the ball operation, minimizing theintervention, and to reduce the amount of material necessary forrealizing the short circuit of the corresponding portion of theconfiguration terminal 30.

It is also possible to realize such local connection areas by means of areal local bonding with leads. It is important to remark the fact thatthe short circuit realized by the ball or bonding operations isexclusive for the two portions of the configuration terminal 30, thecontact having the possibility of occurring with the first portion 30 aor with the second portion 30 b, never with both in the embodiment ofFIGS. 3A-3B. As a result, the ball/local connection area 38 is shownwith a dashed line in FIG. 3B. The simultaneity of the balls should berealized only in non-binding pre-configuration contexts of the twoportions 30 a and 30 b when the terminals Ta and Tb are not connected tothe supply references, realizing an optional continuity between pads, asbetter described hereafter.

In a preferred embodiment of the configuration terminal 30 according tothe invention, one or more intermediate metallization levels areprovided, interposed between the first metal1 and the secondmetallization level metal2, as schematically shown in FIG. 3C. By way ofillustration, such figure shows the case of a single intermediatemetallization level metalm.

In this case, the first metallization level metal1, connected to thesupply reference Vdd in correspondence with the first portion 30 a andto the ground Gnd in correspondence with the second portion 30 b, isconnected to the intermediate metallization level metalm by means of aplurality of first vias Vm1.

Similarly the intermediate metallization level metalm is connected tothe second metallization level metal2 by means of a plurality of secondvias Vm2.

In the example shown in FIG. 3C, such intermediate metallization levelmetalm is shown as continuous since the circuit section shown in thefigure has been taken in correspondence with a transversal element ofsuch intermediate metallization level metalm. In any case, suchintermediate metallization level metalm should have central pointsconnected to each other and to a corresponding terminal, Ta or Tb, ofthe portions 30 a and 30 b of the configuration terminal 30. In the casewherein such intermediate metallization level metalm is continuous thereis the connection of all the islands 31 of one of the portions 30 a, 30b of the configuration terminal 30.

Although the description of the configuration terminal 30 is made withreference to FIGS. 3A-3C, such figures show only possible embodiments ofthe configuration terminal 30 according to the invention, and theinvention is not to be intended as limited thereto.

In particular, it is possible to realize the configuration terminal 30with structures comprising any number of metallization levels greaterthan two. In this case, the last metallization level is suitablyinterdigitized for allowing the connection options for the contactterminal IN of the configuration terminal 30. Moreover, such last levelis connected, by means of a plurality of vias, to the underlying levels,at least one of which is suitably connected to the supply references. Inparticular, without particularly deep connections, it is possible torealize the configuration terminal 30 with a multilevel structurewherein the last metallization level is suitably interdigitized and thenext to last is connected to the supply references.

In a preferred embodiment of the invention, such first and second viasare realized by means of metal plugs, in particular realized withtungsten.

Thanks to the use of such configuration terminals, it is possible torealize a stacked structure of integrated devices having a simplifiedlayout, schematically shown in FIG. 4 and globally indicated with 40. Itis to be remarked that, advantageously according to the invention, thesingle integrated devices do not need dedicated supplies besides thenormal supply and they can comprise any number of configurable pinswhich can be placed anywhere, without the need of closeness to a supplyreference.

The stacked structure 40 shown in FIG. 4 comprises a plurality ofdevices or levels L1 . . . Ln, each one comprising at least oneconfiguration terminal 30 realized according to the invention besidesthe traditional supply pads connected to the pins of the voltagereferences Gnd and Vdd.

Advantageously the stacked structure 40 has a limited number of leads orconnection wires Wn, limiting the risk of short circuit being theselective options introduced only by means of bond.

In particular, the configuration terminal 30 has local connection areas38 for the connection to the voltage references Vdd and Gnd and they donot need local connection wires in addition to the supply connectionwires Wn that provide the usual connection of the supply pads of thesingle levels. Therefore the integrated devices comprised in the stackedstructure 40 are maintained at the minimal number of pins (minimalpinout). In fact, as shown in FIG. 4, only two supply pins are enough.

In this way, carrying out, in the assembly step, the so called ball isenough for realizing the local connection areas 38 for “fixing” theconnection of the configuration terminal 30 to one of the voltagereferences, Vdd or Gnd. The configuration terminals 30 are thusconfigurable by means of short circuit. Hereafter in the description“terminals being sensitive to the short circuit” will be used forindicating such possibility of configuration by means of a simple shortcircuit.

Moreover, being able to reduce the number of bonding connections orleads of the supply pins, it is possible to reduce the distance betweensuch pins with respect to the configurations used for the traditionaldevices since the risk of short circuit between fewer bonding wires islower. The reduced short circuit risk between different leads allows tocontain the realizing spaces of the configuration terminal 30 (alreadyminimized in their execution) being able to reduce the distance betweenthe same and the pads provided with leads

For each additional configuration address of the integrated device, itis in fact enough to introduce a configuration terminal 30, forrealizing the corresponding configuration terminal with the desiredconnection to the voltage references, Vdd and Gnd.

A comparison with the stacked structure 20 realized according to theprior art and shown in FIG. 2 allows one to immediately appreciate thelayout and bonding simplification of the stacked structure 40. One couldalso appreciate the further advantage linked to the freedom ofpositioning the configuration terminals 30. However, to facilitate thecomparison with the known solution, an identical scheme has beenrespected for the positioning of the configuration terminals 30 in FIG.4. It is also to be highlighted that the stacked structure 40 comparedto the stacked structure 20 realized according to the prior art does notrequire more than two supply pins (in particular supply Vdd and groundGnd).

Moreover, the configuration terminals 30 do not introduce layoutconstrains since they do not need a particular positioning with respectto the supply reference pins.

It is also to be noted that the presence of the portions 30 a and 30 band of the local connection areas 38 in the configuration terminal 30implies an increase of its dimensions with respect to a traditional pad,to avoid any risk of short circuit of the terminal, without howeverreaching the dimensions of two traditional pads, such area increasebeing however moderate if compared with the several advantages attainedin terms of layout of the device.

The configuration terminal 30 allows to obtain the following advantages:

-   -   in the first place, the portions 30 a and 30 b of the        configuration terminal 30 can be moved closer together to attain        a reduction of the dimension of the terminal itself;    -   in the second place, given the reduced dimensions of the central        parts of the configuration terminal 30 portions, the connection        38 to the contact terminal IN can be simply realized by means of        a “ball” operation;    -   in the third place, the configuration terminal 30 allows to        bring in place the desired supply references, independently from        the number of the device pins;    -   finally, the configuration terminal 30 allows to eliminate any        constrain with the outside, thanks to independent portions        realized by central parts completely insulated from peripheral        parts, thus having the possibility of being placed freely inside        an integrated device.

Thanks to the use of such configuration terminals being sensitive to theshort circuit it is possible to configure an integrated device at theend of the realization process of the same.

In particular, the configuration method according to one embodiment ofthe invention comprises the steps of:

-   -   providing an integrated device comprising a plurality of        configuration terminals;    -   realizing the configuration terminals by means of a first        portion connected to a first supply reference and a second        portion connected to the ground Gnd and configurable by means of        the short circuit;    -   configuring the device at the end of its realization process by        means of a short-circuiting step of such configuration        terminals.

Although integrated devices comprising a plurality of additional addressand configuration terminals have been dealt with, it is also possible toapply the invention also to devices comprising a single additionaladdress and configuration terminal.

Advantageously, as already previously hinted at, the configurationterminal 30 can be used also for realizing further functions useful foran integrated device. In such applications, the terminals Ta and Tb ofthe inner parts of the portions 30A and 30B are not connected to anysupply reference (Vdd and Gnd).

First of all, making reference in particular to FIGS. 5A to 5E, it ispossible to realize a configuration structure 50 comprising a pair ofconfiguration terminals 30 for carrying out an exchange between twoinput signals A and B on a first BUS1 and a second line BUS2.

In particular, the configuration terminals 30 of such pair have firstinput_1 and second contact terminals input_2 connected to each other ina crossed way and connected to the first BUS1 and to the second lineBUS2.

In particular, making reference to the section shown in FIG. 3C, thefirst metallization level metal1 is, in this case, left floating (notconnecting the terminals Ta and Tb) while the intermediate metallizationlevel metalm of the first 30 a and second portions 30 b is connected tothe input signals A and B, respectively.

Advantageously, by means of a bonding connection it is thus possible toapply such input signals A and B to the first and to the second lineBUS1 and BUS2, respectively, and to exchange them with each other, bysimply inverting the bonding carried out on the portions 30 a and 30 bof the pair of configuration terminals 30, as shown in FIGS. 5B and 5C.

It is also possible to connect both the lines BUS1 and BUS2 to an inputsignal, A or B, as schematically shown in FIGS. 5D and 5E. In this case,both the portions 30 a and 30 b of a configuration terminal 30 of thepair are connected by means of bonding to the input signal of interest,A or B.

It is to be noted that in the traditional devices such inversion orhowever a change of the paths for signals coming from outside implies achange of the device used.

It is also possible to change the functionality of a configurationterminal 30, as schematically shown in FIG. 6.

In particular, the portions 30 a and 30 b of the configuration terminal30 are in this case connected to a first f(a) and to a second functionf(b) (for example, counter for 64 or for 128) and, by means of shortcircuit of the portion connected to the function of interest with thecontact terminal IN, the configuration terminal 30 is configured so asto operate according to one of such functions.

In this case, making reference to the section shown in FIG. 3C, thefirst metallization level metal1 of the two portions 30 a and 30 b iskept floating (not connecting the terminals Ta and Tb) and the secondmetallization level metal2 is used for realizing the desired functionsf(a) and f(b).

In this case, the configuration step of the device by means of a balloperation (or equivalently a bonding one) allows to change thefunctionality of the device itself (in the example considered fromcounter for 64 to counter for 128, or vice versa).

Once again it is to be noted that the terminal configuration is decidedfreely at the end of the manufacturing process by means of short circuitand the corresponding integrated device internal signal can be treatedwithout the use of additional masks and with a wide flexibility.

Always by using the separation of the portions 30 a and 30 b of theconfiguration terminal 30 according to the invention it is possible torealize the exchange of connections of the reversible type:external-internal and internal-external, as schematically shown in FIG.7.

In this case, the portions 30 a and 30 b are connected to respectivecontact terminals Input_1 and Input_2 and, by means of bonding by leads,the one or the other of such terminals is enabled to be visible outside.

In an even more general way, as schematically shown in FIG. 8, theconfiguration terminal 30 has a first 30 a, a second 30 b and a thirdportion 30 c, structurally independent from one another.

As previously seen, the first 30 a and the second portion 30 b haverespective terminals Ta and Tb. The third portion 30 c, which isintermediate between such first and second portions 30 a and 30 b, isconnected between an external reference EXT and the contact terminal INof the configuration terminal 30.

In this way, if the terminals Ta and Tb are left floating, theconfiguration terminal 30 transmits the external reference EXT to thecontact reference IN.

If instead a short circuit is carried out of one of such portions, thecorresponding signal thereon is transmitted to the contact terminal IN.

It is also possible, in this case, to consider the terminals Ta and Tbof the first 30 a and of the second portions 30 b connected to thesupply references Vdd and Gnd or receiving suitable functions f(a) andf(b), as shown in the figure.

It is also possible to invert the origin of the signal from the insidetowards the outside with non forcing leads, as well as to deviate thesignal on the input f(a) and/or f(b) in turn internal, the direction ofthe flows of signals realized by the configuration terminal 30 shown inFIG. 8 being completely free.

In other words, the configuration terminal 30 is able to realizeconnections of the internal-external, external-internal,internal-internal type.

Advantageously, the final choice of the signal on the contact terminalIN of the shown configuration terminal 30 can be left free during therealization step of the integrated device comprising such terminal anddefined only in a successive design step by means of simple shortcircuiting one of the portions composing the configuration terminal 30.

In conclusion, the proposed configuration terminal 30 allows to obtainintegrated devices with high configurability and in the meantime:

to operate a simplification of the bonding;

to consider more configuration inputs on a same chip;

to remove the configurability constrains concerning the closeness of thesupply references;

to minimize the area occupation;

to favor the assemblies of the stacked type.

All of the above U.S. patents, U.S. patent application publications,U.S. patent applications, foreign patents, foreign patent applicationsand non-patent publications referred to in this specification and/orlisted in the Application Data Sheet, are incorporated herein byreference, in their entirety.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

1. A configuration terminal for integrated devices, comprising a firstconductive portion and a second conductive portion; first and secondterminals electrically connected to the first and second conductiveportions; and a contact terminal suitable to be selectively connected tosaid first and second terminals, the contact terminal including: aconductive first side portion having first and second conductivesections that are spaced apart from, and positioned at, opposite sidesof the first conductive portion; and a conductive second side portionhaving first and second conductive sections that are spaced apart from,and positioned at, opposite sides of the second conductive portion. 2.The configuration terminal according to claim 1, further comprising alocal connection area suitable to short circuit said contact terminalwith one of said first and second conductive portions.
 3. Theconfiguration terminal according to claim 2, wherein said localconnection area includes a conductive ball connecting the contactterminal and the one of said first and second conductive portions. 4.The configuration terminal according to claim 2, wherein said localconnection area includes a bonded connection.
 5. The configurationterminal according to claim 1, wherein each of said first and secondconductive portions includes a plurality of fingers interdigitized withthe first and second sections of a respective one of the side portionsof said contact terminal.
 6. The configuration terminal according toclaim 1, wherein said first and second terminals are connected torespective supply reference terminals.
 7. The configuration terminalaccording to claim 1, wherein said first and second terminals areconfigured to receive respective input signals.
 8. The configurationterminal according to claim 1, wherein said first and second terminalsare connected to respective input functions.
 9. The configurationterminal according to claim 1, wherein each of the first and secondconductive portions comprises: a non-final metallization level connectedto a corresponding one of said first and second terminals; a firstplurality of conductive vias electrically connected to the non-finalmetallization level; and a final metallization level electricallyconnected to the conductive vias, the final metallization levelincluding a conductive portion positioned between the first and secondconductive sections of a corresponding one of the side portions of thecontact terminal.
 10. The configuration terminal according to claim 9,wherein, in each of the first and second conductive portions, said finalmetallization level is suitably interdigitized so as to alternateconductive portions with the first and second conductive sections of thecorresponding side portion of the contact terminal.
 11. Theconfiguration terminal according to claim 10, wherein saidinterdigitized final metallization level is configured to facilitate ashort-circuiting operation of said final metallization level with theconductive sections of the corresponding side portion of the contactterminal.
 12. The configuration terminal according to claim 9, furthercomprising an intermediate metallization level interposed between saidnon-final metallization level and said final metallization level andconnected thereto by a second plurality of conductive vias.
 13. Theconfiguration terminal according to claim 12, wherein said non-finalmetallization levels of the first and second conductive portions areconnected to respective supply reference terminals.
 14. Theconfiguration terminal according to claim 9 wherein said vias comprisemetallic plugs.
 15. The configuration terminal according to claim 1,further comprising a third conductive portion interposed between saidfirst and second conductive portions and said contact terminal includesa conductive central portion having first and second conductive sectionsthat are spaced apart from, and positioned at, opposite sides of thethird conductive portion.
 16. The configuration terminal according toclaim 15, wherein said third conductive portion comprises a central partcompletely contained inside a peripheral part, of said contact terminal.17. The configuration terminal according to claim 15, wherein said thirdportion is configured to be connected to an external reference signalwhen the terminals of said first and second conductive portions arefloating.
 18. The configuration terminal according to claim 17, whereinthe first and second conductive portions are connected to external andinternal structures, respectively.
 19. The configuration terminalaccording to claim 15, further comprising a local connection areasuitable to short-circuit said contact terminal of said third portionand at least one of said first and second conductive portions.
 20. Asemiconductor-integrated device, comprising: a plurality of addresspads; a plurality of supply pins; and a configuration terminal thatincludes: a first conductive portion and a second conductive portion;first and second terminals electrically connected to the first andsecond conductive portions; and a contact terminal suitable to beselectively connected to said first and second terminals, the contactterminal including: a conductive first side portion having first andsecond conductive sections that are spaced apart from, and positionedat, opposite sides of the first conductive portion; and a conductivesecond side portion having first and second conductive sections that arespaced apart from and positioned at opposite sides of the secondconductive portion.
 21. The semiconductor-integrated device of claim 20,further comprising a conductive ball connecting the contact terminal andone of said first and second conductive portions.
 22. Thesemiconductor-integrated device of claim 20, wherein each of said firstand second conductive portions includes a plurality of fingersinterdigitized with the first and second sections of a respective one ofthe side portions of said contact terminal.
 23. Thesemiconductor-integrated device of claim 20, wherein each of the firstand second conductive portions comprises: a non-final metallizationlevel connected to a corresponding one of said by first and secondterminals; a first plurality of conductive vias electrically connectedto the non-final metallization level; and a final metallization levelelectrically connected to the conductive vias, the final metallizationlevel including a conductive portion positioned between the first andsecond conductive sections of a corresponding one of the side portionsof the contact terminal.
 24. The semiconductor-integrated device ofclaim 23, wherein, in each of the first and second conductive portions,said final metallization level is suitably interdigitized so as toalternate conductive portions with the first and second conductivesections of the corresponding side portion of the contact terminal. 25.The semiconductor-integrated device of claim 23, further comprising anintermediate metallization level interposed between said non-finalmetallization level and said final metallization level and connectedthereto by a second plurality of conductive vias.
 26. Thesemiconductor-integrated device of claim 20, further comprising a thirdconductive portion interposed between said first and second conductiveportions and said contact terminal includes a conductive central portionhaving first and second conductive sections that are spaced apart from,and positioned at, opposite sides of the third conductive portion. 27.The semiconductor-integrated device of claim 26, wherein said thirdconductive portion comprises a central part completely contained insidea peripheral part of said contact terminal.
 28. A stacked structure,comprising: a plurality of devices arranged on a plurality of levels,each of said devices having a configuration terminal that includes: afirst conductive portion and a second conductive portion; first andsecond terminals electrically connected to the first and secondconductive portions; and a contact terminal suitable to be selectivelyconnected to said first and second terminals, the contact terminalincluding: a conductive first side portion having first and secondconductive sections that are spaced apart from, and positioned at,opposite sides of the first conductive portion; and a conductive secondside portion having first and second conductive sections that are spacedapart from, and positioned at, opposite sides of the second conductiveportion.
 29. The stacked structure of claim 28, wherein eachconfiguration terminal includes a conductive ball connecting the contactterminal and one of said first and second conductive portions.
 30. Thestacked structure of claim 28, wherein each of said first and secondconductive portions includes a plurality of fingers interdigitized withthe first and second sections of a respective one of the side portionsof said contact terminal.
 31. The stacked structure of claim 28, whereineach of the first and second conductive portions comprises: a non-finalmetallization level connected to a corresponding one of said first andsecond terminals; a first plurality of conductive vias electricallyconnected to the non-final metallization level; and a finalmetallization level electrically connected to the conductive vias, thefinal metallization level including a conductive portion positionedbetween the first and second conductive sections of a corresponding oneof the side portions of the contact terminal.
 32. The stacked structureof claim 31, wherein, in each of the first and second conductiveportions, said final metallization level is suitably interdigitized soas to alternate conductive portions with the first and second conductivesections of the corresponding side portion of the contact terminal. 33.The stacked structure of claim 31, further comprising an intermediatemetallization level interposed between said non-final metallizationlevel and said final metallization level and connected thereto by asecond plurality of conductive vias.
 34. The stacked structure of claim28, further comprising a third conductive portion interposed betweensaid first and second conductive portions and said contact terminalincludes a conductive central portion having first and second conductivesections that are spaced apart from, and positioned at, opposite sidesof the third conductive portion.
 35. The stacked structure of claim 34,wherein said third conductive portion comprises a central partcompletely contained inside a peripheral part of said contact terminal.